EMP PROTECTION

    Protection against vacuum I have been reading that diode junction is the weak link in electronics when they undergo an EMP. While transistor junctions would also be subject to failure, the idea is that diodes are often the guardians of adequate current flow in the power supply stages and elsewhere. the EMP would introduce high-voltage transients that could be high enough to exceed the diode's breakdown voltage, which in turn would allow the diode to temporarily conduct the current in the wrong direction until the transient EMP voltage breaks down. essentially, the process is equivalent to replacing the diodes with low-value resistors during the transient peak and during this time, although brief, it damages the sensitive components. This leads me to ask if there is a trade-off between the normal parameters for the selection of the diode/rectifier and the use of more robust diodes that are capable of handling higher forward and backward voltages. Of course, there are other factors in EMP events such as pulse distance, pulse size, pulse strength, etc., but if one tried and hardened the electronics against an EMP, this approach offers some additional protection, where possible, against EMP. Yes, the Faraday cage without a ground connection is a great solution, but placing all the electronic components in metal boxes and protecting them from the drivers entering and leaving the cage, in my opinion, is the most suitable for electronic devices stored. to be clear, an EMP of sufficient strength could sizzle all the semiconductor junctions, but is it possible to improve, harden if you wish, operate electronic components with diodes capable of handling higher voltage and current peaks?