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Tiny electrically pumped micro-lasers epitaxially grown on industry standard silicon substrates
Decades ago, the Moore's law
predicted that the number of transistors in a dense integrated circuit doubles
approximately every two years. This prediction was proved to be right in the
past few decades, and the quest for ever smaller and more efficient semiconductor
devices have been a driving force in breakthroughs in the technology.
With an enduring and increasing need
for miniaturization and large-scale integration of photonic components on the
silicon platform for data communication and emerging applications in mind, a
group of researchers from the Hong Kong University of Science and Technology
and University of California, Santa Barbara, successfully demonstrated
record-small electrically pumped micro-lasers epitaxially grown
on industry standard (001) silicon substrates in a recent study. A submilliamp
threshold of 0.6 mA, emitting at the near-infrared (1.3?m) was achieved for a
micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude
smaller than those previously reported lasers epitaxially grown on Si.
Their findings were published in the
journal Optica on August 4, 2017.
"We demonstrated the smallest
current injection QD lasers directly grown on industry-standard (001) silicon
with low power consumption and high temperature stability," said Kei May
Lau, Fang Professor of Engineering and Chair Professor of the Department of
Electronic & Computer Engineering at HKUST.
"The realization of
high-performance micron-sized lasers directly grown on Si represents a major
step toward utilization of direct III-V/Si epitaxy as an alternate option to
wafer-bonding techniques as on-chip silicon light sources with dense
integration and low power consumption."
The two groups have been collaborating
and has previously developed continuous-wave (CW) optically-pumped micro-lasers
operating at room temperature that were epitaxially grown on silicon with no
germanium buffer layer or substrate miscut. This time, they demonstrated
record-small electrically pumped QD lasers epitaxially grown on silicon.
"Electrical injection of micro-lasers is a much more challenging and
daunting task: first, electrode metallization is limited by the micro size
cavity, which may increase the device resistance and thermal impedance; second,
the whispering gallery mode (WGM) is sensitive to any process imperfection,
which may increase the optical loss," said Yating Wan, a HKUST PhD
graduate and now postdoctoral fellow at the Optoelectronics Research Group of
UCSB.
"As a promising integration
platform, silicon photonics need on-chip laser sources that dramatically
improve capability, while trimming size and power dissipation in a
cost-effective way for volume manufacturability. The realization of
high-performance micron-sized lasers directly grown on Si represents a major
step toward utilization of direct III-V/Si epitaxy as an alternate option to
wafer-bonding techniques," said John Bowers, Deputy Chief Executive
Officer of AIM Photonics.
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